Inventchip Technology Unveils 2000V SiC 4-Phase Boost Module in 3B Package to Enhance System‘s Power Density

On February 28th, Inventchip Technology (IVCT) officially launched the 3B package 2000V silicon carbide (SiC) 4-phase boost power module (IV3B20023BA2), providing a high-voltage and high-power-density solution for the photovoltaic (PV) sector and other fields. The product has passed industrial-grade reliability qualification and is being validated by PV customers for implementation.

Module Appearance

The module product (IV3B20023BA2) matches the standard Easy 3B package in size, with a housing height of only 12mm to reduce the volume of application systems. Notably, the 3B package features a metal base (as shown in Figure 2), which enhances installation stability, eliminates the risk of plastic base aging, and ensures higher safety and reliability.

Module Circuit Topology

The module (IV3B20023BA2) integrates a 4-phase boost circuit internally, sharing a common power ground and divided into 2 groups. It incorporates a thermistor for temperature monitoring (as shown in Figure 3), flexibly adapting to 2 or 4 DC input channels to meet personalized design needs. Compared with discrete component solutions, it significantly improves power density and simplifies circuit design.

Additionally, the module is equipped with Kelvin source pins to suppress drive voltage spikes during high-speed switching of SiC MOSFETs, ensuring system safety and efficiency.

2000V SiC MOSFET and SBD Chips

Each boost circuit in the module (IV3B20023BA2) consists of a 2000V 23mΩ MOSFET and a 2000V 40A SBD chip. The 2000V SiC MOSFET adopts the IVCT’s mature second-generation planar-gate SiC MOSFET process technology, delivering excellent performance and reliability. It supports a turn-on voltage of +15V to +18V and a turn-off voltage of -3.5V to -2V, with a rated current of 65A at room temperature. The 2000V SiC SBD has a positive temperature coefficient for forward voltage drop (Vf), which facilitates current sharing in parallel connections and ensures system safety and stability.

Application Value of 2000V SiC Modules

With the development of power electronics, power conversion systems in PV, energy storage, and power grid fields show two trends:

1. Pursuing higher operating frequencies to reduce inductor and capacitor specifications, lower material costs, and improve efficiency and power density.

2. Pursuing higher bus voltages to reduce device conduction current and losses, enhancing system efficiency.

2000V SiC MOSFETs and diodes are particularly suitable for 1500V PV boost circuits (MPPT). As shown in Figure 3, in boost conversion circuits, 2000V SiC discrete components can simplify circuit topology, reduce component count, lower total material costs, and simplify application control:

Using the 2000V SiC power module (IV3B20023BA2) further simplifies circuit design and significantly improves power density compared to discrete component solutions, as below: