News
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2025/08/18
TC3Pak Topside Cooling Package SiC MOSFET Empowers Efficient and High-Density Power DesignTo meet the demand for high-density power conversion, Inventchip Technology has introduced two new TC3Pak (Topside Cooling 3Pak) topside-cooling, surface-mount packaged 1200V silicon carbide (SiC) MOView details > -
2025/08/01
2000V SiC 3B Packaged Power Module Integrates 4 Boost Circuits, Boosting PV System’s Power DensityIVCT's 3B package 2000V silicon carbide (SiC) 4-phase boost power module (IV3B20023BA2) is providing a high-voltage and high-power-density solution for the PV Boost systerms.View details > -
2025/07/13
IVCT's 3rd-Generation 1200V 35mΩ SiC MOSFET Enters Mass Production and Delivery, Gaining Market RecognitionThe first batch of 3rd-generation 1200V SiC 35mΩ MOSFET products developed by Inventchip Technology (IVCT) has won orders from multiple key customers with excellent performance and quality. Nearly 2View details > -
2025/05/06
IVCT will showcase One-stop SiC and ICs solutions at PCIM EU2025Inventchip Technology will be exhibiting on May 6–8, 2025 at PCIM Europe 2025 in Nuremberg, Germany.View details >
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