This product utilizes 3rd-generation planar-gate SiC MOSFET technology. Based on the 2nd-generation, it features further optimized design and enhanced device cell density. While ensuring voltage withstand capability and short-circuit robustness, its specific on-resistance (Rsp) is reduced to 2.5mΩ·cm², reaching world-leading levels. It also has a lower on-resistance temperature coefficient, maintaining stable low losses at high temperatures.Recommended gate drive voltage is 18V, compatible with 15V.