Inventchip's third generation SiC MOSFETs, with their outstanding performance and reliability, support delivery volumes in the tens of millions and cover a full range of power applications.

Leveraging its mature third-generation SiC MOSFET process platform, Inventchip Technology has developed a comprehensive 1200V 10-150 mΩ product portfolio, featuring nine resistance values and six mainstream package types, providing comprehensive support for high-voltage conversion applications across low, medium and high power levels. Thanks to their excellent high-temperature stability, low switching losses, and high reliability, the full range of third-generation 1200V SiC MOSFET products is widely applicable in fields such as new energy vehicles, photovoltaic energy storage, AI computing, and industrial power supplies, helping to drive system upgrades toward greater efficiency and smaller form factors. Having undergone stable delivery of tens of millions of units and market validation, the third-generation 1200V SiC MOSFET series has earned widespread recognition for its high-quality and reliable performance.

1. A full range of specifications and diverse packaging options, providing comprehensive coverage of power application scenarios across the entire industry

The 3rd-generation 1200V SiC MOSFET product portfolio is tailored to the current-carrying capabilities required by equipment across various industries, providing comprehensive coverage ranging from high-power energy storage, fast charging and AI computing to medium- and low-power automotive and industrial equipment. The portfolio divides into three On-State-Resistance-Groups:

• Low-resistance Devices (10 mΩ, 13 mΩ, 18 mΩ and 21 mΩ):
  Designed for high current, suitable for high-power applications such as ultra-high-power energy storage PCS units in the hundreds of kilowatts range, DC fast-charging stations and next-generation high-density AI computing power supplies.
• Standard Devices (26 mΩ and 35 mΩ):
  Striking a balance between performance and cost, suitable for photovoltaic inverters, large-capacity energy storage systems, traditional AI server power supplies and high-power automotive power supplies.
• Medium-to-high resistance Devices (60 mΩ, 75 mΩ, 120 mΩ and 150 mΩ):
  Suitable for applications such as in-vehicle air conditioning, on-board chargers and high-voltage DC-DC converters; these are the mainstream choices for in-vehicle power conversion.

Six standard package types are being launched simultaneously meeting the needs of mainstream applications featuring a standard Kelvin source pin to accommodate various hardware designs and thermal management requirements - including through-hole, surface-mount and top-side cooling:

• TO247-4 / TO247-4 Slim:
  Standard through-hole package, suitable for general-purpose high-power equipment such as photovoltaic energy storage systems, DC charging points and high-voltage industrial variable-frequency drives.
• TO263-7:
  A standard surface-mount package that utilizes the PCB's cooling areas for heat dissipation. It has a small footprint and is suitable for traditional AI server power supplies, lightweight automotive power supplies and portable energy storage devices.
• TC3Pak / X2Pak / QDPak:
  Top-Side-cooled packages that enable a high density designs, balancing heat dissipation with miniaturization and are suitable for next-generation AI computing power supplies, high-power energy storage inverters and high-density automotive and industrial power supplies. A design example is shown in Figure 1.

Figure 1, AIDC HV IBC 800V / 50V Full-Brick Power Module
(Note: This solution utilises QDPak's third-generation 1200V, 21mΩ SiC MOSFETs in a top-cooled package, together with the IVCR1401, a SiC-specific Nextdrive® chip.)

An overview on the full range of third-generation 1200V SiC MOSFET products is shown in Table 1.

Table 1, Full range of third-generation 1200V SiC MOSFET products
(Note: In addition to discrete components, IVCT can supply bare dies in all the resistance values listed above, enabling customers to develop their own power modules.)

2. Core Processes and Performance Advantages

IVCT's third-generation 1200V SiC MOSFET process platform has undergone extensive optimization, resulting in significant improvements across the entire product range in three key areas: High-temperature stability, Switching losses across the full temperature range and Long-term operational reliability
It is fully capable of meeting the demanding operating conditions of high-end power equipment across various industries. Taking the third-generation 1200V, 35mΩ SiC MOSFET as an example, the measured comparisons with similar products reveal the following key performance advantages.

2.1 More stable R_DS(on) at High temperatures with significantly optimized ON-resistance losses

By optimizing the wafer cell structure and the doping process, on-resistance drift under high-temperature operating conditions is effectively suppressed. This significantly improves operational stability. Under the same operating conditions, a comparison of the on-resistance R_DS(on)-variations at different junction temperatures T_j between the third-generation 1200V, 35mΩ (IV3Q12035D7ZB) and second-generation 1200V, 40mΩ (IV2Q12040D7Z) SiC MOSFETs, both in TO263-7 packages, is shown in Figure 2.

Figure 2, Comparison of R_DS(on) vs. Temperature Characteristics
(Note: The 3rd-generation devices features significantly reduce conduction losses across all temperature ranges, making them suitable for demanding, long-term, continuous, and heavy-load operating conditions such as automotive applications, photovoltaic storage systems, and charging stations.)

2.2 Lower switching losses, balancing efficiency and EMI

Through fine-tuning of cell and capacitance characteristics, switching losses across the entire on- and off-state operating range have been effectively optimized, ensuring excellent performance from light-load to high-temperature, heavy-load conditions. The device does not require compromising on losses by reducing the switching frequency; instead, it ensures high-efficiency operation while increasing the system's power density and reducing the size of magnetic components, thereby facilitating the miniaturization and weight reduction of the equipment.

Figure 3, Comparison of E_on/E_off Switching Loss Curves at Different Current Levels (Note: Under the same test conditions and at the same current, the third-generation device exhibits better switching loss performance.)

Figure 4, Comparison of E_on/E_off Switching Loss Curves at Different Temperatures (Note: Under the same test conditions and at the same temperature, the third-generation device exhibits better switching loss performance.)

2.3 Ability to handle higher switching frequencies and higher dv/dt

IVCT's third-generation 1200, 35mΩ SiC MOSFET features excellent high-speed dynamic endurance, making it suitable for higher switching frequencies and ultra-fast turn-off conditions. Through multidimensional structural and process synergistic optimization at the device level, the product has passed rigorous long-term reliability testing for dynamic reverse bias (DRB). It can stably withstand long-term, continuous voltage slopes of dv_DS/dt =150 V/ns and has a maximum dv_DS/dt tolerance exceeding 200 V/ns.

Table 2, Long-Term DRB Capability Evaluation of Third-Generation 1200 V, 35 mΩ Devices

Figure 5, 1000-Hour DRB Test Waveforms for Third-Generation 1200 V, 35 mΩ Devices

Figure 6 1-minute DRB test waveform for third-generation 1200V, 35 mΩ Devices

2.4 Reliability testing that exceeds industry standards ensures a longer device lifespan

Building on standard industry reliability testing criteria, the entire lineup of third generation SiC MOSFET products undergoes rigorous reliability testing that exceeds the automotive-grade standard AEC-Q101. It is simulating extreme aging conditions to identify potential issues in wafers and packages early on, thereby ensuring long-term operational reliability. The optimized devices meet the high-reliability and long-life requirements of automotive, industrial and other equipment, helping to reduce equipment failures during long-term operation.

3. One-Stop SiC+ Chip Solutions to Drive Industrial Upgrades

Inventchip Technology provides one-stop solutions for silicon carbide (SiC) power semiconductors and chips. The company operates an automotive-grade SiC wafer fab in Yiwu, Zhejiang, and, with its extensive technical expertise and service capabilities, offers customers solutions ranging from discrete devices and modules to driver chips.

• High-Quality Alternative Selection:
  The device's core performance parameters and switching characteristics meet industry-leading standards, offering strong pin compatibility that enables rapid integration into existing solutions and reduces the cost of iterating and upgrading end-user devices.
• Stable and reliable delivery:
  Leveraging the advantages of our in-house IDM production capacity and drawing on our experience in mass production and delivery of tens of millions of units, we maintain an independent and controllable supply chain and ensure stable delivery, effectively mitigating the risk of supply fluctuations and meeting large-scale batch demand.
• One-Stop Chip Solution:
  Paired with IVCT's innovatively developed SiC-specific Nextdrive® chip, forming a “silicon carbide device + driver chip” solution that provides end-to-end technical support and enables the implementation of application scenarios.

Moving forward, Inventchip Technology will leverage its third-generation SiC MOSFET product series to explore solutions for AI computing power supplies. Stay tuned.

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