Solid-State Transformers (SST) serve as the "energy routers" for next-generation power systems, AI computing infrastructure, and rail transit. Medium-to-high voltage Silicon Carbide (SiC) MOSFETs are the core components that dictate overall system power density, conversion efficiency, and reliability. As a leading Chinese SiC power semiconductor IDM and chip solution provider, InventChip has strategically developed ultra-high voltage SiC technology. The company has now established a complete 3.3 kV SiC MOSFET product matrix covering bare dies, discrete devices, and power modules. Key metrics like switching loss and specific on-resistance are comparable to those from top-tier international manufacturers, with some high-temperature characteristics exceeding those of leading global-grade devices. The products have successfully passed system-level reliability verification by multiple core clients and secured initial commercial orders from top global railway players and leading SST developers. Concurrently, InventChip is advancing the R&D of its 2.3kV and 10kV high-voltage SiC platforms to empower the industrialization of high-end equipment like railway, wind/solar/storage micro-grids, high-power fast charging, SSTs, and high-voltage BMS.

Leveraging its mature, self-developed 3.3 kV SiC process platform, InventChip has introduced three categories of standardized power devices. Paired with its proprietary, dedicated SiC gate drivers, they form an integrated "power device + gate driver" high-voltage SiC solution:

• 3.3 kV SiC MOSFET Bare Die (IV3Q335S0BD)

Ratings: 3.3 kV / 50 Ω
Applications: High-voltage Solid-State Relay (SSR), ideal for high-voltage energy storage and rail transit BMS high-voltage insulation resistance detection

• TO-247-4 HV High-Voltage, High-Creepage Discrete Device (IV3Q33050TH)

Ratings: 3.3 kV / 50 mΩ
Package: TO-247-4 with enlarged 16.6mm plastic mold creepage, satisfying high-voltage safety standards
Applications: small-to-medium power high-voltage conversion systems

Figure 1: 3.3 kV SiC MOSFET in TO-247-4 HV Package

• XPak Half-Bridge Power Module (IVXP332M3HA3):

Ratings: 3.3 kV / 2.5 mΩ, continuous DC current of 750A at room temperature and a pulsed current of 1500A
Package: XPak
Matching Driver: IVCO1B12 driver, featuring gate-oxide leakage current monitoring, constant-current drive and integrated negative voltage turn-off bias
Applications: Railway transit traction inverters, medium-voltage grid-tie for wind, solar and energy-storage systems, and high-power medium-voltage motor drives

Figure 2: 3.3 kV, 2.5 mΩ Half-Bridge XPak Power Module & Driver Board Reference Design

At the PCIM Europe power electronics exhibition in June 2026, InventChip showcased a megawatt-level rectifier/inverter Solid-State Transformer (SST) prototype built with the XPak 3.3 kV half-bridge module and its matching IVCO1B12 driver board. Compared to traditional silicon-based IGBT solutions, InventChip's 3.3 kV SiC devices drastically simplify system power conversion stages, reduce overall size and weight, and boost power conversion efficiency. This effectively addresses pervasive industry challenges, including excessive high-frequency switching losses, complex insulation designs, and difficult thermal management.

Figure 3: 3.3 kV Megawatt-Class Converter Prototype Displayed at PCIM Europe 2026

Figure 4: Schematic Diagram for Railway, Wind-Solar Storage & Medium-Voltage Motor Drive Applications

Within the national "10 kV / 1 kA" high-voltage semiconductor breakthrough project, InventChip collaborated with Zhejiang University to develop a 10 kV SiC MOSFET. At the 2025 ISPSD conference, they jointly unveiled the R&D results for a large-area 1cm² 10kV SiC MOSFET chip. It achieved a specific on-resistance (R_DS(ON),sp) below 120 mΩ⋅cm², approaching the theoretical performance limit for SiC material. Additionally, InventChip's independently developed 2.3 kV SiC MOSFET is undergoing process optimization and reliability verification simultaneously. It will hit the market soon, further expanding the company's 2.3 kV to 10kV high-voltage SiC portfolio.

As an independent IDM manufacturer with proprietary SiC technology, InventChip tightly aligns downstream application needs with chip design, wafer fabrication, and power electronics. By continuously advancing its 2.3 kV, 3.3 kV, and 10 kV SiC technologies, InventChip supplies standardized, mass-producible high-voltage SiC bare dies, discrete devices and power modules to accelerate large-scale commercial deployment of Solid-State Transformers. We support the full performance upgrade of new power grids, AI computing infrastructure, railway, wind-solar energy storage and high-power charging stations, and will work alongside partners across the industrial chain to unlock broad market potential for high-voltage SiC technology.