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SiC MOSFETs
In the field of modern power electronics, selecting the appropriate power devices is crucial for improving system performance and efficiency. SiC MOSFET products, compared to silicon-based MOSFETs, have lower conduction losses, faster switching speeds and operating frequencies, making them suitable for more efficient and compact application scenarios.
碳化硅(SiC)二极管
In the field of modern power electronics, selecting the appropriate power devices is crucial for improving system performance and efficiency. Silicon carbide diodes, compared to silicon-based diodes, have lower conduction losses, higher operating temperatures, and switching frequencies, which are conducive to enhancing the overall system efficiency!
碳化硅(SiC)模块
In the field of modern power electronics, selecting appropriate power devices is crucial for improving system performance and efficiency. Silicon carbide power module products, combining the unique advantages of silicon carbide devices and different packaging technologies, are capable of supporting system designs that are more efficient, more compact, and more streamlined!
栅极驱动芯片
In the field of modern power electronics, selecting the appropriate gate drive chips is crucial for ensuring the safety and stability of the system, as well as improving system efficiency. IVCT provides a variety of gate drive chips, including single and dual channel options, different insulation levels, negative voltage drive, short-circuit protection, and resistance to Miller effect, to support more stable and efficient system designs!
电源控制芯片
The analog control chips developed by IVCT require no programming or debugging, yet they can provide fast, precise and reliable analog control signals. At the same time, they are capable of overcoming various technical challenges in different applications, thereby helping to rapidly develop high-performance power supply products.
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